April 28, 2009 - ASM International N.V. (NASDAQ: ASMI and Euronext Amsterdam: ASM) reports today its first quarter 2009 operating results in accordance with US GAAP.

First quarter of 2009 net sales of EUR 89.1 million, down 41% from the fourth quarter of 2008 and down 55% from the first quarter of 2008;

Net loss allocated to the shareholders of the parent of the first quarter of 2009 was EUR 23.3 million, or EUR 0.45 diluted net loss per share, as compared to net loss of EUR 6.2 million, or EUR 0.12 diluted net loss per share for the fourth quarter of 2008 and net earnings of EUR 12.6 million or EUR 0.22 diluted net earnings per share for the first quarter of 2008;

Bookings in the first quarter of 2009 were EUR 84.4 million, up 4% from the fourth quarter of 2008. Bookings from our Front-end segment were down 32% and bookings from our Back-end segment were up 65%. Quarter-end backlog was EUR 86.1 million, down 5% from the end of the previous quarter;

Front-end segment cash balance increased from EUR 78.9 million per 31 December 2008 to EUR 82.6 million per 31 March 2009.

Taiwan Foundry Selects ASM International for High-k ALD
Will incorporate Hafnium-based materials into 28 nm manufacturing and
initiate process development for advanced generation high-k gates


ALMERE, the Netherlands, April 28, 2009 -ASM International N.V. (NASDAQ: ASMI and Euronext Exchange in Amsterdam: ASM), announced that a Taiwanese foundry has selected ASM's Pulsar® atomic layer deposition (ALD) tool for the volume manufacturing of its 28 nm node high-k gate dielectric process.

Additionally, the foundry will pursue process development activity with ASM for their advanced generation high-k gates. ASM will deliver additional Pulsar process modules during the second quarter of 2009 for the advanced node development program. The foundry has worked with ASM's ALD high-k and metal gate equipment over the past four years to develop its high-k gate process, which utilizes hafnium-based materials.

"Achieving a successful high-k manufacturing process for the 28 nm node is a testament to ASM's ability to integrate new materials into manufacturing," said Glen Wilk, business unit manager for transistor products at ASM. "Having qualified our high-k process demonstrates its readiness for manufacturing at the 28 nm node, and we look forward to advanced developments that extend those same benefits to future nodes."

ASM's Pulsar was the first tool to be used in volume manufacturing of high-k gates, starting at the 45 nm node and now that lead is extending to the 28nm node. ASM's high-k gate films include multiple hafnium based oxides, with aluminum oxide and lanthanum oxide available as high-k cap layers for metal electrode work function tuning.

Tokyo Electron Limited Acquires 4.9% Shareholding in ASM International


ALMERE, the Netherlands, April 28, 2009 - ASM International N.V. (Nasdaq: ASMI and Euronext Amsterdam: ASM) announces today that it has confirmed with Tokyo Electron Limited (Tokyo Stock Exchange - 1st Section: 8035), that it has acquired on the open market an interest in ASMI. Tokyo Electron Limited (TEL) has informed ASMI that this interest amounts to 4.9% of ASMI's total common share capital.

TEL has told ASMI that its participation in ASMI is intended as a long-term investment. TEL has also told ASMI that at present it has no intention to increase its shareholding in ASMI.

ASMI values long-term committed shareholders and therefore welcomes TEL's investment. TEL is among the world's top three IC equipment companies.

ASMI and TEL have not entered into any specific agreement or understanding in connection with the share purchase. On December 19 2008, the companies entered into a licensing partnership concerning ASMI's Atomic Layer Deposition (ALD) patents in the field of batch ALD.